Professor Man Ho Cho’s Research Team Publishes Article in Prestigious Journal Nano Letters

Professor Man Ho Cho’s research team from the Yonsei Department of Physics confirmed that using silicon (Si) and silicon-germanium (SiGe) nanowires in nanostructures enhances electron mobility 2.6 times over existing technology. These nanowires minimize surface flaws, thereby allowing for faster transmission in semiconductors. The results were published October 22 in the online version of Nano Letters with the title “Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering.” The research by Professor Cho and his team into Si and SiGe nanowires promises to have a number of important applications for creating new, high-performance semiconductor particles.