Professor Park Chul-min’s research team (Department of Materials Science and Engineering) developed a memory device that has high flexibility and storage capacity. Due to its simple manufacturing process and low cost, the memory device is expected to be applied for next-generation semiconductors. On December 3rd, the team announced its development of a multilevel memory device which controls the voltage and generates more than twice the storage capacity of existing ones. A multilevel memory device refers to a device that saves more than four types of information. The research team has succeeded in developing a multilevel device that uses ferroelectric polymer which is a material that maintains polarization without initiating electric power from the outside. Despite its ample merits for high velocity and storage even during a halt, ferroelectric materials have displayed troubles for a next-generation memory device due to their shortcomings in the multilevel features and operations. However, Professor Park’s team discovered that polarization can be controlled when change is applied to the voltage for ferroelectrics. While the device based on ferroelectrics can save information only in 0 and 1, the multilevel device can save information in four types. Professor Park explains that this increase in storage is possible from controlling the electron’s location with changing the voltage. With such a larger storage capacity, the same can be stored with a smaller size. Also, this multilevel memory device is made of flexible polymer that does not lose its electric characteristics even when bent. The manufacturing cost is also low, which adds to its advantages for a memory device.